BSS209PW 查看數據表（PDF） - Infineon Technologies

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BSS209PW

OptiMOS®-P Small-Signal-Transistor

Infineon Technologies 

Parameter

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics3)

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode direct current, pulsed

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol Conditions

BSS 209PW

min.

Values

typ.

Unit

max.

C iss

-

C oss

V GS=0 V, V DS=-15 V,

f =1 MHz

-

C rss

-

t d(on)

-

tr

V DD=-10 V, V GS=-

-

4.5 V, I D=0.58 A,

t d(off)

R G=6 Ω

-

tf

-

87

115 pF

35

46.7

30

45

2.6

4.0 ns

7

11

6

9

4.6

6.9

Q gs

-

Q gd

V DD=10 V, I D=0.58 A,

-

Qg

V GS=0 to 4.5 V

-

V plateau

-

-0.18

-0.46

-1.0

-2.0

-0.24 nC

-0.7

-1.3

-V

IS

T C=25 °C

I SM

-

-

-0.7 A

-

-

-4.0

V SD

V GS=0 V, I F=-0.58 A,

T j=25 °C

-

-0.92 -0.88 V

t rr

V R=10 V, I F=|I S|,

di F/dt =100 A/µs

-

9

11.2 ns

Q rr

-

1.27 1.59 nC

Rev. 1.32

page 3

2011-07-13

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