BUJ303A(2011) 查看數據表（PDF） - NXP Semiconductors.

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BUJ303A
(Rev.:2011)

NPN power transistor

NXP Semiconductors. 

NXP Semiconductors

BUJ303A

NPN power transistor

102

IC

(A)

ICMm1a0x

ICmax

1

003aag029

duty cycle = 0.01

II(3)

tp = 10 µs

(1)

100 µs

10-1

(2)

1 ms

I(3)

10 ms

DC

Fig 4.

10-2

1

III(3)

10

102

103

VCEclamp (V)

(1) Ptot maximum and Ptot peak maximum lines.

(2) Second breakdown limits.

(3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation.

III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs.

Forward bias safe operating area for Tmb ≤ 25 °C

BUJ303A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 05 — 3 May 2011

© NXP B.V. 2011. All rights reserved.

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