C67078-S1326-A2 查看數據表（PDF） - Siemens AG
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C67078-S1326-A2 Datasheet PDF : 9 Pages
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BUZ 71 L
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
32
Ptot = 40W
A
ID
24
20
16
12
8
l kj i h g
f
VGS [V]
a
2.5
b
3.0
ec
3.5
d
4.0
e
4.5
df
5.0
g
5.5
h
6.0
i
6.5
cj
7.0
k
8.0
l 10.0
b
4
a
0
0.0
1.0
2.0
3.0
4.0 V 5.5
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.32
Ω
RDS (on)
0.24
a
b
c
d
0.20
0.16
0.12
0.08
e
ig
k
f
hj
0.04 VGS [V] =
abcdef
23.50 3.5 4.0 4.5 5.0 5.5
0.00
0
4
8
12
ghi j k
6.0 6.5 7.0 8.0 10.0
16 20 A 26
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
50
A
ID
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
16
S
gfs
12
10
8
6
4
2
0
0
5 10 15 20 25 A 35
ID
Semiconductor Group
6
07/96
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