C67078-S1326-A2 查看數據表（PDF） - Siemens AG
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C67078-S1326-A2 Datasheet PDF : 9 Pages
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BUZ 71 L
Not for new design
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 7 A, VGS = 5 V
0.32
Ω
RDS (on)
0.24
0.20
0.16
98%
0.12
typ
0.08
0.04
0.00
-60
-20
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
2.8
2.4
98%
2.0
typ
1.6
2%
1.2
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 2
pF
C
10 3
10 2
Ciss
Coss
Crss
10 1
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
A
I
F
10 1
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
07/96
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