TGF4230-EEU 查看數據表（PDF） - TriQuint Semiconductor
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TGF4230-EEU Datasheet PDF : 7 Pages
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TGF4230-EEU
GAIN VS.
INPUT POWER
DRAIN CURRENT
VS. INPUT POWER
12
F =8.5GHz
V D =8.0V
I Q =50mA*
11
T A =25°C
10
9
8
7
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
180
160
140
120
100
F =8.5GHz
V D =8.0V
I Q =50mA*
T A =25°C
80
60
40
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
ABSOLUTE
MAXIMUM RATINGS
Drain - to- source Voltage, VDS. ................................................................................................................ 12 V
Gate - to- source Voltage, VGS ...................................................................................................... - 5 V to 0 V
Mounting temperatur e (30 sec), TM .................................................................................................. 320 C
Storage temperature range, TSTG ............................................................ ................................ - 65 to 200 C
Power dissipation, PD .................................................................................. (see thermal data on next page)
Operating channel temperature, TCH .............................................................. (see thermal data on next page)
Ratings over base-plate temperature range TBP (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated “RF and DC Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods of time may affect device reliability.
3
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