TGF4230-EEU 查看數據表（PDF） - TriQuint Semiconductor

零件编号

产品描述 (功能)

比赛名单

TGF4230-EEU

Discr 1.2mm ete HFET

TriQuint Semiconductor 

TGF4230-EEU

RF AND DC

CHARACTERISTICS

LINEAR MODEL

Pout

GP

PAE

I DSS

GM

VP

BV G S

BV G D

PARAMETER

Output Power

Power Gain

Power Added Efficiency

Drain Saturation Current

Transconductance

Pinch Off Voltage

Breakdown Voltage Gate-Source

Breakdown Voltage Gate-Drain

MIN

27.5

8

50

204

144

-2.7

- 30

- 30

NOMINAL

28.5

10

55

294

198

-1.85

- 22

- 22

MAX UNIT

-

dBm

-

dB

-

%

384 mA

252 mS

-1

V

- 17

V

- 17

V

Pout, Gain, and P AE: Measured at 8.5 GHz, drain voltage of 8.0 V . Gate voltage is adjusted to achieve

quiescent current of approximately 20% IDSS with no RF signal applied. The source is gr ounded. Input power

between 18 and 19-dBm.

IDSS: Saturated drain-source current. Sear ch for the maximum IDS at VGS = 0.0 V, and VDS swept between 0.5 V

to 3.5 V. Note that the drain voltage at which I DSS is located and r ecorded as VDSP.

GM: Transconductance. (I DSS - I DS1)/ I VG1 I. I DS1 measured at VG1 = -0.25 V using the knee search

technique; VDS swept between 0.5 V and VDSP to search for maximum I DS1.

VP: Pinch off voltage. VGS for I DS = 0.5 mA/mm of gate width. V DS fixed at 2.0 V, VGS swept to bring IDS to

0.5 mA/mm. Sweep will stop if V P current not found beyond 0.5 V of the minimum V Pspecification.

BVGS: Breakdown voltage, gate to source. I BD = 1.0 mA/mm of gate width. Source fixed at ground, drain not

connected (floating). When 1.0mA/mm drawn at gate, V GS measured as B VGS.

BVGD: Breakdown voltage, gate to drain. IBD = 1.0 mA/mm of gate width. Drain fixed at gr ound, source not

connected (floating). When 1.0 mA/mm drawn at the gate, V GD measured as B VGD.

CDG

RDG

LG

RG

G

RI

RGS

CGS

VCCS

R1

R2

RS

LS

RD

LD

D

CDS

RDS

VDS = 8.0 V and 30% IDSS at T = 25°C

FET Elements

L G = 0.0421 nH

RG = 0.43

RGS = 81700

R I = 1.21

CGS = 1.21 pF

CDG = 0.1004 pF

RDG = 204000

RS = 0.4

LS = 0.015 nH

RDS = 98.01

CDS = 0.25325 pF

RD = 0.66

LD = 0.022 nH

VCCS Parameters

M = 132.9 mS

A=0

R1 = 1E19

R2 = 1E19

F=0

T = 5.49 pS

5

TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com

Share Link: