C1226 查看數據表（PDF） - IMP, Inc
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C1226 Datasheet PDF : 2 Pages
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®
ISO 9001 Registered
Process C1226
CMOS 1.2µm
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSN
ON Resistance
HVPR0N
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
Body Factor
γN
Conduction Factor
βN
Effective Channel Length
LeffN
Width Encroachment
∆WN
Punch Through Voltage
BVDSSN
Poly Field Threshold Voltage VTFPN
Minimum
0.70
120
550
0.30
64
5
8
Typical
0.90
700
VGS = 5V
VDS = 100V
0.45
0.475
78
1.35
0.4
12
15
Maximum
1.10
850
0.65
92
Unit Comments
V
V
Ω W/L = 147/5
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Operating Voltage
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
Body Factor
γP
Conduction Factor
βP
Effective Channel Length
LeffP
Width Encroachment
∆WP
Punch Through Voltage
BVDSSP
Poly Field Threshold Voltage VTFP(P)
Minimum
– 0.70
– 120
2000
-0.65
20
–5
–8
Typical
– 0.90
2500
VGS = 5V
VDS = 100V
– 0.45
0.6
25
1.5
0.4
–12
–12
Maximum
– 1.10
3000
– 0.30
30
Unit Comments
V
V
Ω W/L = 139/5
V
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
© 2001 IMP, Inc.
69
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