C1226 查看數據表（PDF） - IMP, Inc
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C1226 Datasheet PDF : 2 Pages
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Process C1226
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
Well (field) Sheet Resistance ρN-well(f)
N+ Sheet Resistance
ρN+
N+ Junction Depth
xjN+
P+ Sheet Resistance
ρP+
P+ Junction Depth
xjP+
High-Voltage Gate Oxide Th HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
IPOX
ρPOLY1
ρM1
ρM2
Passivation Thickness
TPASS
High Voltage Section Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Minimum Typical Maximum Unit
1.0
1.7
20
35
0.3
60
110
0.3
24
24
33.6
42.0
30.0
45
29
200+900
Layout Rules
2.4
KΩ/
50
Ω/
µm
150
Ω/
µm
nm
nm
50.4
nm
Ω/
mΩ/
mΩ/
nm
4.0µm
2.0µm
1.5/2.0µm
3.0/2.0µm
1.5/1.5µm
1.5/1.5µm
2.5/1.5µm
2.5/1.5µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
Comments
n-well
oxide+nit.
1.0µm
1.0µm
1.5µm
1.0µm
65x65µm
5.0µm
80µm
70
C1226-11-01
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