GP1200ESM33 查看數據表（PDF） - Dynex Semiconductor
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GP1200ESM33 Datasheet PDF : 9 Pages
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GP1200ESM33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V
CES
VGES
IC
IC(PK)
P
max
Visol
Collector-emitter voltage
V = 0V
GE
Gate-emitter voltage
-
Continuous collector current
T = 80˚C
case
Peak collector current
1ms, Tcase = 120˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
3300 V
±20 V
1200 A
2400 A
14.7 kW
6000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
8.5 ˚C/kW
-
16.3 ˚C/kW
-
4 ˚C/kW
-
125 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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