GP1200ESM33 查看數據表（PDF） - Dynex Semiconductor
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GP1200ESM33 Datasheet PDF : 9 Pages
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GP1200ESM33
10000
100
IC max. (single pulse)
tp = 100µs
1000
10
100
IC max. DC
tp = 1ms
(continuous)
1
10
Diode
Transistor
Conditions:
Tvj = 125˚C, Tcase = 80˚C
1
0.1
0.001
0.01
0.1
1
10
1
10
100
1000
10000
Collector-emitter voltage, Vce - (V)
Pulse width, tp - (ms)
Fig.7 Forward bias safe operating area
Fig.8 Transient thermal impedance
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig.9 DC current rating vs case temperature
400
380
360
340
320
300
280
260
240
220
200
0
Tvj = 25˚C, VCE = 25V
VGE = 0V, f = 1MHz
10
20
30
40
50
60
Collector-emitter voltage, VCE - (V)
Fig.10 Typical input capacitance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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