EM6A9320BI-30 查看數據表（PDF） - Etron Technology

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EM6A9320BI-30

4M x 32 DDR SDRAM

Etron Technology 

Et r onT ec h

4Mx32 DDR SDRAM

EM6A9320

Absolute Maximum Rating

Symbol

VIN, VOUT

VDD, VDDQ

TA

TSTG

TSOLDER

PD

IOUT

Item

Input, Output Voltage

Power Supply Voltage

Ambient Temperature

Storage Temperature

Soldering Temperature (10s)

Power Dissipation

Short Circuit Output Current

Rating

- 0.3 ~ VDDQ+0.3

-0.3 ~ 3.6

0~70

- 55~150

240

2.0

50

Unit Note

V

V

°C

°C

°C

W

mA

Recommended D.C. Operating Conditions (SSTL_2 In/Out, TA = 0 ~ 70 °C)

Symbol

Parameter

Min.

Typ.

Max. Unit

Note

VDD Power Supply Voltage

2.66

2.8

2.94

V

1,2

2.375

2.5

2.625

1,3

2.66

2.8

2.94

V

1,2

VDDQ Power Supply Voltage(for I/O )

2.375

2.5

2.625

1,3

VREF Input Reference Voltage

0.49 x VDDQ

-

0.51 x VDDQ V

VTT Termination Voltage

VREF – 0.04 VREF VREF + 0.04 V

VIH(DC) Input High Voltage

VREF + 0.15

-

VDDQ + 0.3 V

VIL(DC) Input Low Voltage

Vssq - 0.3

-

VREF- 0.15 V

VOH Output High Voltage

VOL Output Low Voltage

IIL Input Leakage Current

Vtt + 0.76

-

-

-

-5

-

-

V

Vtt- 0.76 V

5

uA

IOH = -15.2 mA

IOL = +15.2 mA

IOL Output Leakage Current

-5

-

Note : 1. Under all conditions VDDQ must be less than or equal to VDD.

2. For CLK Frequency is 350, 333, 300, or 285MHz

3. For CLK Frequency is 250, or 200MHz

5

uA

Capacitance (VDD = 2.8V, f = 1MHz, TA = 25 °C)

Parameter

Symbol

Input Capacitance (A0~A11, BA0, BA1)

CIN1

Input Capacitance (CK, CK#, CKE, CS#, RAS#, CAS#, WE#)

DQ & DQS input/output capacitance

CIN2

COUT

DM0~DM3 input/output capacitance

Note: These parameters are periodically sampled and are not 100% tested.

CIN3

Min.

4

3

6

6

Max. Unit

5

pF

5

pF

8

pF

8

pF

Etron Confidential

8

Rev 0.3

July. 2002

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