EM6A9320BI-30 查看數據表（PDF） - Etron Technology

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EM6A9320BI-30

4M x 32 DDR SDRAM

Etron Technology 

Et r onT ec h

4Mx32 DDR SDRAM

EM6A9320

D.C. Characteristics

(VDD = 2.8V ± 5% for 350, 333, 300, or 285MHz, VDD=2.5 ± 5% for 250 or 200MHz, TA = 0~70 °C)

Parameter & Test Condition

2.8 3.0 3.3 3.5

Symbol

Max

OPERATING CURRENT : One bank; Active-Precharge;

tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs

changing once per clock cycle; Address and control inputs

changing once every two clock cycles.

IDD0

330 320 280 260

OPERATING CURRENT : One bank; Active-Read-

Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min);

tCK=tCK(min); lout=0mA; Address and control inputs

changing once per clock cycle

IDD1 450 440 380 360

PRECHARGE POWER-DOWN STANDBY CURRENT:

All banks idle; power-down mode; tCK=tCK(min);

CKE=LOW

IDD2P 50 50 50 50

IDLE STANDLY CURRENT : CKE = HIGH;

CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);

Address and control inputs changing once per clock cycle;

VIN=VREF for DQ, DQS and DM

IDD2N

100 100 100 100

ACTIVE POWER-DOWN STANDBY CURRENT : one

bank active; power-down mode; CKE=LOW; tCK=tCK(min)

IDD3P

50

50

50

50

ACTIVE STANDBY CURRENT : CS#=HIGH;CKE=HIGH;

one bank active ; tRC=tRC(max);tCK=tCK(min);Address and

control inputs changing once per clock cycle;

DQ,DQS,and DM inputs changing twice per clock cycle

IDD3N

140 135 120 110

OPERATING CURRENT BURST READ : BL=2; READS;

Continuous burst; one bank active; Address and control

inputs changing once per clock cycle; tCK=tCK(min);

lout=0mA;50% of data changing on every transfer

IDD4R 560 540 480 450

OPERATING CURRENT BURST Write : BL=2; WRITES;

Continuous Burst ;one bank active; address and control

inputs changing once per clock cycle; tCK=tCK(min);

IDD4W 470 450 400 370

DQ,DQS,and DM changing twice per clock cycle; 50% of

data changing on every transfer

AUTO REFRESH CURRENT : tRC=tRFC(min);

tCK=tCK(min)

IDD5 430 430 420 410

SELF REFRESH CURRENT: Sell Refresh Mode ;

CKE<=0.2V;tCK=tCK(min)

IDD6 4 4 4 4

BURST OPERATING CURRENT 4 bank operation:

Four bank interleaving READs; BL=4;with Auto Precharge;

tRC=tRC(min); tCK=tCK(min); Address and control

inputschang only during Active, READ , or WRITE

command

IDD7

920 890 780 720

45

Unit Notes

180 160 mA

260 240 mA

45 40 mA

80 80 mA

45 40 mA

100 100 mA

440 420 mA

300 270 mA

300 280 mA

3 3 mA

650 550 mA

Note:

1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device.

2. All voltages are referenced to VSS.

3. These parameters depend on the cycle rate and these values are measured by the cycle rate

under the minimum value of tCK and tRC. Input signals are changed one time during tCK.

4. Power-up sequence is described in previous page.

Etron Confidential

9

Rev 0.3

July. 2002

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