GA100NA60U 查看數據表（PDF） - International Rectifier
零件编号
产品描述 (功能)
比赛名单
GA100NA60U Datasheet PDF : 10 Pages
| |||
GA100NA60U
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
14000
12000
10000
8000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
6000
4000
Coes
2000
0
1
Cres
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 6 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4
20
VCC = 400V
I C = 50A
16
12
8
4
0
0
100
200
300
400
500
QG , Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
www.irf.com
Share Link: 