HD74HC30 查看數據表（PDF） - Renesas Electronics

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HD74HC30

8-input NAND Gates

Renesas Electronics 

HD74HC30

Electrical Characteristics

Item

Input voltage

Output voltage

Input current

Quiescent supply

current

Symbol

VIH

VIL

VOH

VOL

Iin

ICC

VCC (V)

2.0

4.5

6.0

2.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

6.0

6.0

Ta = 25°C

Min Typ Max

1.5 — —

3.15 — —

4.2 — —

— — 0.5

— — 1.35

— — 1.8

1.9 2.0 —

4.4 4.5 —

5.9 6.0 —

4.18 — —

5.68 — —

— 0.0 0.1

— 0.0 0.1

— 0.0 0.1

— — 0.26

— — 0.26

— — ±0.1

— — 1.0

Ta = –40 to+85°C

Min Max Unit

Test Conditions

1.5

—

V

3.15

—

4.2

—

—

0.5 V

—

1.35

—

1.8

1.9

—

V Vin = VIH or VIL IOH = –20 µA

4.4

—

5.9

—

4.13

5.63

—

—

—

IOH = –4 mA

—

IOH = –5.2 mA

0.1

V Vin = VIH or VIL IOL = 20 µA

0.1

—

0.1

—

0.33

IOL = 4 mA

—

0.33

IOL = 5.2 mA

—

±1.0 µA Vin = VCC or GND

—

10 µA Vin = VCC or GND, Iout = 0 µA

Switching Characteristics (CL = 50 pF, Input tr = tf = 6 ns)

Item

Propagation delay

time

Output rise time

Output fall time

Input capacitance

Symbol VCC (V)

tPLH

2.0

4.5

6.0

tPHL

2.0

4.5

6.0

tTLH

2.0

4.5

6.0

tTHL

2.0

4.5

6.0

Cin

—

Ta = 25°C

Ta = –40 to +85°C

Min Typ Max Min Max Unit

— — 130 —

165 ns

— 10 26

—

33

— — 22

—

28

— — 130 —

165 ns

— 12 26

—

33

— — 22

—

28

— — 75

—

95 ns

— 5 15

—

19

— — 13

—

16

— — 75

—

95 ns

— 5 15

—

19

— — 13

—

16

— 5 10

—

10 pF

Test Conditions

Rev.2.00, Oct 06, 2005 page 3 of 6

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