HM5117400B 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HM5117400B

4,194,304-word 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM5117400B Series

4,194,304-word 4-bit Dynamic Random Access Memory

ADE-203-369A (Z)

Rev. 1.0

Nov. 15, 1995

Description

The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most

advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

as a high speed access mode.

Features

Single 5 V ( 10%)

High speed

Access time : 60 ns/ 70 ns/ 80 ns (max)

Low power dissipation

Active mode : 605 mW/550 mW/495 mW(max)

Standby mode : 11 mW (max)

: 0.83 mW (max) (L-version)

Fast page mode capability

Long refresh period

2048 refresh cycles : 32 ms

: 128 ms (L-version)

3 variations of refresh

-only refresh

-before- refresh

Hidden refresh

Battery backup operation (L-version)

Test function

16-bit parallel test mode

This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.

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