HM5117400B 查看數據表（PDF） - Hitachi -> Renesas Electronics

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比赛名单

HM5117400B

4,194,304-word 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM5117400B Series

DC Characteristics (Ta = 0 to +70 C, VCC = 5 V 10%, VSS = 0 V)

HM5117400B

-6

-7

-8

Parameter

Symbol Min

-only refresh current*2 ICC3

—

Standby current*1

I CC5

—

-before- refresh ICC6

—

current

Fast page mode current*1, *3 ICC7

—

Battery backup current

I CC10

—

Input leakage current

I LI

–10

Output leakage current ILO

–10

Max Min

110 —

5—

110 —

80 —

350 —

10 –10

10 –10

Max Min

100 —

5—

100 —

70 —

350 —

10 –10

10 –10

Max Unit Test Conditions

90 mA tRC = min

5 mA

= VIH,

= VIL

Dout = enable

90 mA tRC = min

65 mA

350 A

10 A

10 A

tPC = min

CMOS interface

Dout = High-Z

CBR refresh: tRC = 62.5 s

tRAS 0.3 s

0 V Vin 7 V

0 V Vout 7 V

Dout = disable

Output high voltage

VOH

2.4 VCC 2.4 VCC 2.4 VCC V

High Iout = –5 mA

Output low voltage

VOL

0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA

Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output

open condition.

2. Address can be changed once or less while

3. Address can be changed once or less while

= VIL.

= VIH.

Capacitance (Ta = 25 C, VCC = 5 V 10%)

Parameter

Symbol

Typ

Max

Unit

Notes

Input capacitance (Address)

CI1

Input capacitance (Clocks)

CI2

Output capacitance (Data-in, Data-out)

CI/O

—

5

—

7

—

7

pF

1

pF

1

pF

1, 2

Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2.

= VIH to disable Dout.

6

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