HSP061-4NY8 查看數據表（PDF） - STMicroelectronics

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HSP061-4NY8

4-line ESD protection for high speed lines

STMicroelectronics 

Characteristics

1

Characteristics

HSP061-4NY8

Symbol

Table 1. Absolute maximum ratings Tamb = 25 °C

Parameter

VPP Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

Ipp Repetitive peak pulse current (8/20 µs)

Tj Operating junction temperature range

Tstg Storage temperature range

TL Maximum lead temperature for soldering during 10 s

Value

Unit

8

kV

20

3

A

-40 to +150 °C

-65 to +150 °C

260

°C

Symbol

Table 2. Electrical characteristics Tamb = 25 °C

Parameter

Test conditions

Min. Typ. Max. Unit

VBR

Breakdown voltage

IRM

Leakage current

VCL

Clamping voltage

IR = 1 mA

VRM = 3 V

IEC 61000-4-2, +8 kV

contact (IPP = 30 A),

measured at 30 ns

6

V

100 nA

18

V

CI/O - GND

Capacitance (input/output to

ground)

VI/O = 0 V,

F = (200 MHz - 3000 MHz),

VOSC = 30 mV

0.5 0.6 pF

Capacitance variation

CI/O - GND (input/output to ground)

VI/O = 0 V F = 1 MHz,

VOSC = 30 mV

0.03 0.05 pF

fC

Cut-off frequency

ZDiff

Differential impedance

-3dB

tr = 200 ps (10 - 90%)(1)

Z0 Diff = 100 

6

GHz

85 100 115 

1. HDMI specification conditions. This information can be provided for other applications. Please contact your

local ST office.

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Doc ID 17414 Rev 5

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