HX6408VRN 查看數據表（PDF） - Honeywell International

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HX6408VRN

512k x 8 STATIC RAM

Honeywell International 

HX6408

Advanced Information

DC ELECTRICAL CHARACTERISTICS

Symbol Parameter

Worst Case (1)

Units Test Conditions

Min

Max

IDDSB

Static Supply Current

TA=25°C

TA=125°C

5

mA

VDD=max, Iout=0mA,

10

Inputs Stable

IDDOP3

Static Supply Current

Deselected

24

mA

VDD=max, Iout=0mA,

f=fmax, NSL=NCS=VIH (2)

IDDOPW

Dynamic Supply Current,

Selected (Write)

1 MHz

2 MHz

10 MHz

25 MHz

40 MHz

9

mA/MHz VDD=max, Iout=0mA,

18

NSL=VIH, NCS=VIL (1)

89

160

260

IDDOPR

Dynamic Supply Current,

Selected (Read)

1 MHz

2 MHz

10 MHz

25 MHz

40 MHz

4

mA/MHz VDD=max, Iout=0mA,

8

NSL=VIH, NCS=VIL (1)

40

100

160

IDDOP1

Dynamic Supply Current,

Deselected

1.5

mA

VDD=max, Iout=0mA,

f=1MHz, NSL=VIH (2)

IDDOP2

Dynamic Supply Current,

Sleep

0.2

mA

VDD=max, Iout=0mA,

f=1MHz, NSL=VIL (2)

II

Input Leakage Current

-5

5

µA

Vss VI VDD

IOZ

Output Leakage Current

-10

10

µA

Vss VIO

VDD output = high Z

VIL

Low-Level Input Voltage

0.3xVDD

V

VDD=3.0V

VIH

High-Level Input Voltage

0.7xVDD

V

VDD=3.6V

VOL

Low-Level Output Voltage

0.4

V

VDD=3.0V, IOL = 8mA

VOH

High-Level Output Voltage

2.7

V

VDD=3.0V, IOH = 4mA

(1) Worst case operating conditions: VDD=3.0V to 3.6V, -55°C to +125°C, post total dose at 25°C.

(2) All inputs switching. DC average current.

CAPACITANCE (1)

Symbol Parameter

Worst Case (1)

Units

Min Max

CI

Input Capacitance

9

pF

CO

Output Capacitance

8

pF

(1) This parameter is tested during initial design characterization only.

Test Conditions

VI=VDD or VSS, f=1 MHz

VIO=VDD or VSS, f=1 MHz

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