HY27US08562A-S 查看數據表（PDF） - Hynix Semiconductor

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HY27US08562A-S

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Hynix Semiconductor 

HY27US(08/16)561A Series

HY27SS(08/16)561A Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Document Title

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Revision History

Revision

No.

History

0.0

Initial Draft.

1) Change AC Parameter

tCRY(1.8V)

Before

50+tr(R/B#)

0.1

After

60+tr(R/B#)

2) Change 256Mb Package Type.

- WSOP package is changed to USOP package.

- Figure & dimension are changed.

1) Correct the test Conditions (DC Characteristics table)

Test Conditions (ICC1) Test Conditions (ILI, ILO)

Before

tRC=50ns,

CE#=VIL,

IOUT=0mA

VIN=VOUT=0 to 3.6V

After

tRC(1.8V=60ns,

3.3V=50ns)

CE#=VIL,

IOUT=0mA

VIN=VOUT=0 to Vcc (max)

2) Change AC Conditions table

0.2

3) Add tWW parameter ( tWW = 100ns, min)

- Texts & Figures are added.

- tWW is added in AC timing characteristics table.

4) Edit Copy Back Program operation step

5) Edit System Interface Using CE don’t care Figures.

6) Correct Address Cycle Map.

7) Change NOP (table 11)

Main Array Spare Array

Before

1

2

After

2

3

Draft Date Remark

Apr. 04. 2005 Preliminary

Jul. 07. 2005 Preliminary

Aug. 08. 2005 Preliminary

Rev 0.5 / Jun. 2006

1

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