HY27US08562A-S 查看數據表（PDF） - Hynix Semiconductor

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HY27US08562A-S

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Hynix Semiconductor 

HY27US(08/16)561A Series

HY27SS(08/16)561A Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Revision History

Revision

No.

History

8) Correct PKG dimension (TSOP, USOP PKG)

CP

Before

0.050

After

0.100

9) Change VIL parameter (max.)

1.8V

Before

0.2xVcc

After

0.4

0.2

10) Change AC Parameter

3.3V

0.2xVcc

0.8

tOH

Before

15

After

10

tRP

tREA

30

35

25

30

- Continued -

Draft Date Remark

Aug. 08. 2005 Preliminary

Before

After

tR (1.8V)

12

15

tCRY (1.8V)

50+tr(R/B#)(4)

80+tr(R/B#)(4)

tCRY (3.3V)

50+tr(R/B#)(4)

60+tr(R/B#)(4)

0.3

1) Correct USOP figure.

0.4

1) Correct Figure 32.

1) Add ECC algorithm. (1bit/512bytes)

2) Delet Preliminary.

3) Change AC Parameter

tWHR

0.5

Before

60 ns

After

50 ns

4) Correct Read ID naming

Nov. 07. 2005 Preliminary

Feb. 06. 2006 Preliminary

Jun. 20. 2006

Rev 0.5 / Jun. 2006

2

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