HY57V641620ELT 查看數據表（PDF） - Hynix Semiconductor

零件编号

产品描述 (功能)

比赛名单

HY57V641620ELT

4Bank x 1M x 16bits Synchronous DRAM

Hynix Semiconductor 

Synchronous DRAM Memory 64Mbit (4Mx16bit)

HY57V641620E(L/S)T(P) Series

CAPACITANCE (TA= 0 to 70 oC, f=1MHz, VDD=3.3V)

Parameter

Pin

Input capacitance

Data input / output capacitance

CLK

A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE,

LDQM, UDQM

DQ0 ~ DQ15

Symbol

CI1

Min Max Unit

2.0

4.0

pF

CI2

2.5

5.0

pF

CI/O

3.0

5.5

pF

DC CHARACTERRISTICS I (TA= 0 to 70oC)

Parameter

Symbol

Min

Input Leakage Current

ILI

-1

Output Leakage Current

ILO

-1

Output High Voltage

VOH

2.4

Output Low Voltage

VOL

-

Note: 1. VIN = 0 to 3.3V, All other balls are not tested under VIN =0V

2. DOUT is disabled, VOUT=0 to 3.6

Max

1

1

-

0.4

Unit

uA

uA

V

V

Note

1

2

IOH = -4mA

IOL = +4mA

Rev. 1.5 / Feb. 2005

8

Share Link: