HY57V641620HG 查看數據表（PDF） - Hynix Semiconductor

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HY57V641620HG

4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor 

CAPACITANCE (TA=25°C, f=1MHz)

Parameter

Input capacitance

Data input / output capacitance

Pin

CLK

A0 ~ A11, BA0, BA1, CKE, CS, RAS,

CAS, WE, UDQM, LDQM

DQ0 ~ DQ15

OUTPUT LOAD CIRCUIT

Symbol

Min

CI1

2

CI2

2.5

CI/O

2

HY57V641620HG

Max

Unit

4

pF

5

pF

6.5

pF

Output

Vtt=1.4V

RT=250 Ω

Output

50pF

50pF

DC Output Load Circuit

AC Output Load Circuit

DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3VNote3)

Parameter

Symbol

Min.

Max

Input Leakage Current

Output Leakage Current

Output High Voltage

Output Low Voltage

ILI

ILO

VOH

VOL

-1

1

-1

1

2.4

-

-

0.4

Note :

1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V

2.DOUT is disabled, VOUT=0 to 3.6

Unit

Note

uA

1

uA

2

V

IOH = -4mA

V

IOL = +4mA

Rev. 0.8/Dec. 02

5

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