HY57V641620HG 查看數據表（PDF） - Hynix Semiconductor

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HY57V641620HG

4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor 

DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3VNote5, VSS=0V)

HY57V641620HG

Parameter

Symbol

Test Condition

Speed

Unit Note

-5 -55 -6 -7 -K -H -8 -P -S

Operating Current

IDD1

Burst length=1, One bank active

tRC ≥ tRC(min), IOL=0mA

100 95 90 85 85 85 80 80 80 mA 1

Precharge Standby

Current

in Power Down Mode

IDD2P CKE ≤ VIL(max), tCK = min

IDD2PS CKE ≤ VIL(max), tCK = ∞

2

mA

2

mA

CKE ≥ VIH(min), CS ≥ VIH(min), tCK

= min

Precharge Standby

IDD2N

Current

in Non Power Down Mode

Input signals are changed one time

during 2clks. All other pins ≥ VDD-

0.2V or ≤ 0.2V

15

mA

IDD2NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

12

mA

Active Standby Current

in Power Down Mode

IDD3P CKE ≤ VIL(max), tCK = min

IDD3PS CKE ≤ VIL(max), tCK = ∞

6

mA

5

mA

CKE ≥ VIH(min), CS ≥ VIH(min), tCK

= min

IDD3N Input signals are changed one time

30

mA

Active Standby Current

during 2clks. All other pins ≥ VDD-

in Non Power Down Mode

0.2V or ≤ 0.2V

IDD3NS CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

20

mA

Burst Mode Operating

Current

IDD4

tCK ≥ tCK(min), IOL=0mA CL=3 170 160 150 150 150 150 120 120 120 mA 1

All banks active

CL=2 NA NA NA NA

120

mA

Auto Refresh Current

IDD5

tRRC ≥ tRRC(min), All banks active

160

mA 2

Self Refresh Current

IDD6

CKE ≤ 0.2V

1

mA 3

400

uA 4

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3.HY57V641620HGT-6/7/K/H/P/S

4.HY57V641620HGLT-6/7/K/H/P/S

Rev. 0.8/Dec. 02

6

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