H20R120 查看數據表（PDF） - Infineon Technologies

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H20R120

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

Soft Switching Series

IHW20N120R

60A

TC=80°C

TC=110°C

40A

Ic

20A

0A

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency for hard

switching (turn-off)

(Tj ≤ 175°C, D = 0.5, VCE = 600V,

VGE = 0/+14V, RG = 47Ω)

tp=1µs

2µs

10A

5µs

20µs

1ms

1A

10ms

DC

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. IGBT Safe operating area

(D = 0, TC = 25°C,

Tj ≤175°C;VGE=14V)

350W

300W

250W

200W

150W

100W

50W

0W

25°C 50°C 75°C 100°C 125°C 150°C

40A

30A

20A

10A

0A

25°C 50°C 75°C 100°C 125°C 150°C

Figure 3.

TC, CASE TEMPERATURE

Power dissipation as a function of

case temperature

(Tj ≤ 175°C)

Figure 4.

TC, CASE TEMPERATURE

DC Collector current as a function

of case temperature

(VGE ≥ 14V, Tj ≤ 175°C)

Power Semiconductors

4

Rev. 2.4 May 06

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