H20R120 查看數據表（PDF） - Infineon Technologies

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H20R120

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

1000ns

Soft Switching Series

IHW20N120R

td(off)

1000ns

td(off)

100ns

tf

0A

10A

20A

30A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=47Ω,

Dynamic test circuit in Figure E)

100ns

tf

10Ω

20Ω

30Ω

40Ω

50Ω

60Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=20A,

Dynamic test circuit in Figure E)

100ns

td(off)

tf

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=20A, RG=47Ω,

Dynamic test circuit in Figure E)

6V

max.

5V

typ.

4V

min.

3V

2V

-50°C

0°C

50°C

100°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.7mA)

Power Semiconductors

6

Rev. 2.4 May 06

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