IRFF9120 查看數據表（PDF） - Intersil

零件编号

产品描述 (功能)

比赛名单

IRFF9120

4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

Intersil 

IRFF9120

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Continuous Source Current

Pulse Source Current (Note 3)

ISD

Modified MOSFET

D

ISM

Symbol Showing the

Integral Reverse

P-N Junction

Rectifier

G

MIN

TYP

MAX UNITS

-

-

-4

A

-

-

-16

A

S

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25oC, ISD = -4A, VGS = 0V

-

-

-1.5

V

Diode Reverse Recovery Time

trr

TJ = 150oC, ISD = 4A, dISD/dt = 100A/µs

-

230

-

ns

Reverse Recovery Charge

QRR

TJ = 150oC, ISD = -4A, dISD/dt = 100A/µs

-

1.3

-

µC

NOTES:

2. Pulse test: Pulse width ≤ 300µs, Duty Cycle 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve (Figure 3).

4. VDD = 25V, starting TJ = 250oC, L = 34.7mH, RG = 25Ω, peak IAS = 4.0A. See Figures 15 and 16)

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

0

0

50

100

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

-5

-4

-3

-2

-1

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1.0

0.5

0.2

0.1 0.1

0.05

0.02

0.01

0.01

10-5

PDM

SINGLE PULSE

10-4

10-3

10-2

10-1

t1, RECTANGULAR PULSE DURATION (s)

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-96

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