IRFF9120 查看數據表（PDF） - Intersil

零件编号

产品描述 (功能)

比赛名单

IRFF9120

4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

Intersil 

IRFF9120

Typical Performance Curves (Continued)

1.25

1.15

1.05

0.95

0.85

0.75

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

500

VGS = 0V, f = 1MHz

CISS = CGS + CGD

400

CRSS = CGD

COSS ≈ CDS + CGD

CISS

300

COSS

200

100

CRSS

0

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

3

TJ = 25oC

2

1

TJ = -55oC

TJ = 125oC

-100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-10

TJ = 150oC

TJ = 25oC

-1

0

0

-2

-4

-6

-8

-10

ID, DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

0

-5

-0.1

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

-1.8

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

ID = -8A

-10

VDS = -80V

VDS = -50V

-15

VDS = -20V

-20

0

4

8

12

16

20

Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-98

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