IRHNA7264SE(2001) 查看數據表（PDF） - International Rectifier

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IRHNA7264SE
(Rev.:2001)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier 

IRHNA7264SE

Pre-Irradiation

1000

TOP

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

10

1

0.1

0.01

0.1

5.0V

 20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

TOP

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

100

10

 5.0V

20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 150° C

10

 TJ = 25 ° C

1

0.1

5

 V DS = 50V

20µs PULSE WIDTH

6

7

8

9

10 11 12

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

4

3.0  ID = 34A

2.5

2.0

1.5

1.0

0.5

 VGS = 12V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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