IRHNA7264SE(2001) 查看數據表（PDF） - International Rectifier

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IRHNA7264SE
(Rev.:2001)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier 

IRHNA7264SE

Footnotes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 50V, starting TJ = 25°C, L= 0.86 mH

Peak IL = 34A, VGS = 12V

➂ ISD ≤ 34A, di/dt ≤300A/µs,

VDD ≤ 250V, TJ ≤ 150°C

Pre-Irradiation

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VDS Bias.

200 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —SMD-2

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/01

8

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