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IRHNA9064 查看數據表(PDF) - International Rectifier

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IRHNA9064 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PRraed-IirartaiodniaCtihoanracteristics
IRHNA9064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min Max
300K Rads (Si)2 Units
Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -60
VGS(th) Gate Threshold Voltage
-2.0
IGSS
Gate-to-Source Leakage Forward —
IGSS
Gate-to-Source Leakage Reverse
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source
On-State Resistance (SMD-2)
VSD
Diode Forward Voltage
-4.0
-100
100
-25
0.045
-60 —
V
-2.0 -5.0
— -100 nA
— 100
— -25 µA
— 0.045
0.045 — 0.045
-3.0 — - 3.0 V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS=-48V, VGS =0V
VGS = -12V, ID =-30A
VGS = -12V, ID =-30A
VGS = 0V, IS = -48A
1. Part number IRHNA9064 (JANSR2N7424U)
2. Part number IRHNA93064 (JANSF2N7424U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
MeV/(mg/cm²)) (MeV) (µm)
VDS(V)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
28
285
43
-60
-60
-50
-35
Br
36.8
305
39
-55
-45
-35
-30
I
59.9
345
32.8
-40
-35
-80
-60
Cu
-40
Br
I
-20
0
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
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