IRHNA9160 查看數據表（PDF） - International Rectifier

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产品描述 (功能)

比赛名单

IRHNA9160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier 

Pre-Irradiation

IRHNA9160, JANSR2N7425U

10000

8000

6000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

4000

2000

0

1

C oss

C rss

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = -38 A

16

 VDS

VDS

VDS

=-80V

=-50V

=-20V

12

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

50

100 150 200 250 300

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

 TJ = 150°C

 TJ = 25°C

10

1

0.1

0.0

 VGS = 0 V

1.0

2.0

3.0

4.0

-VSD,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

1000

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

 100us

 1ms

10

 10ms

 TC = 25 °C

TJ = 150 °C

Single Pulse

1

1

10

100

1000

-VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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