IRHNA9160 查看數據表（PDF） - International Rectifier

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IRHNA9160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier 

IRHNA9160, JANSR2N7425U

Pre-Irradiation

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = -25V, starting TJ = 25°C, L= 0.7mH

Peak IL = -38A, VGS = -12V

➂ ISD ≤ -38A, di/dt ≤ -385A/µs,

VDD ≤ -100V, TJ ≤ 150°C

Case Outline and Dimensions — SMD-2

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VDS Bias.

-80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/03

8

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