IS61C3216AL 查看數據表（PDF） - Integrated Silicon Solution

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IS61C3216AL

32K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C3216AL

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

5

pF

COUT

Output Capacitance

VOUT = 0V

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

ISSI ®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

Test Conditions

VDD = Min., IOH = –4.0 mA

VDD = Min., IOL = 8.0 mA

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD

Outputs Disabled

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

Com.

Ind.

Com.

Ind.

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2.2 VDD + 0.5

V

–0.3

0.8

V

–1

1

µA

–2

2

–1

1

µA

–2

2

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

09/26/05

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