IS61C3216AL 查看數據表（PDF） - Integrated Silicon Solution

零件编号

产品描述 (功能)

比赛名单

IS61C3216AL

32K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C3216AL

ISSI ®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol

tRC

Parameter

Read Cycle Time

-12

Min. Max.

Unit

12 —

ns

tAA

Address Access Time

— 12

ns

tOHA

tACE

tDOE

tHZOE(2)

tLZOE(2)

tHZCE(2

tLZCE(2)

tBA

tHZB

tLZB

Output Hold Time

CE Access Time

OE Access Time

OE to High-Z Output

OE to Low-Z Output

CE to High-Z Output

CE to Low-Z Output

LB, UB Access Time

LB, UB to High-Z Output

LB, UB to Low-Z Output

3—

ns

— 12

ns

—6

ns

06

ns

0—

ns

07

ns

2—

ns

—6

ns

06

ns

0—

ns

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0

to 3.0V and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

AC TEST LOADS

480 Ω

5V

OUTPUT

30 pF

Including

jig and

scope

Figure 1

255 Ω

Unit

0V to 3.0V

3 ns

1.5V

See Figures 1 and 2

480 Ω

5V

OUTPUT

5 pF

Including

jig and

scope

Figure 2

255 Ω

6

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

09/26/05

Share Link: