IS61C1024 查看數據表（PDF） - Integrated Silicon Solution
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IS61C1024 Datasheet PDF : 10 Pages
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IS61C1024
IS61C1024L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND
–0.5 to +7.0
V
TBIAS
Temperature Under Bias
–55 to +125
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Output Capacitance
VOUT = 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
ISSI ®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage(1)
ILI
Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.2 VCC + 0.5 V
–0.3
0.8
V
–2
2
µA
–5
5
–2
2
µA
–5
5
4
3
SR028-1K
05/12/99
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