K4S561632C 查看數據表（PDF） - Samsung
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K4S561632C Datasheet PDF : 11 Pages
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K4S561632C
CMOS SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
-60
-7C
-75
-1H
-1L
Symbol
Unit Note
Min Max Min Max Min Max Min Max Min Max
CLK cycle
time
CAS latency=3
tCC
CAS latency=2
6
7.5
7.5
10
10
1000
1000
1000
1000
1000 ns 1
-
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
CAS latency=2
tSAC
5
5.4
5.4
6
-
5.4
6
6
6
ns 1,2
7
Output data
hold time
CAS latency=3
CAS latency=2
tOH
2.5
-
3
3
3
3
3
3
3
ns 2
3
CLK high pulse width
tCH
2.5
2.5
2.5
3
3
ns 3
CLK low pulse width
tCL
2.5
2.5
2.5
3
3
ns 3
Input setup time
tSS
1.5
1.5
1.5
2
2
ns 3
Input hold time
tSH
1
0.8
0.8
1
1
ns 3
CLK to output in Low-Z
tSLZ
1
1
1
1
1
ns 2
CLK to output CAS latency=3
in Hi-Z
CAS latency=2
tSHZ
5
5.4
5.4
6
-
5.4
6
6
6
ns
7
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Symbol
Condition
Min
Typ
Max
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Notes : 1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Unit
Volts/ns
Notes
3
Volts/ns
3
Volts/ns
1,2
Volts/ns
1,2
Rev. 0.4 Sept. 2001
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