K6R1004C1D(2004) 查看數據表（PDF） - Samsung
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K6R1004C1D Datasheet PDF : 9 Pages
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K6R1004C1D
PRELIMINARY
PRELIMINARY
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
VIN, VOUT
VCC
Pd
TSTG
TA
TA
Rating
-0.5 to Vcc+0.5V
-0.5 to 7.0
1
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
* VIL(Min) = -2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Unit
Input Leakage Current
Output Leakage Current
ILI
VIN=VSS to VCC
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
Com.
10ns
-
65
mA
Ind.
10ns
-
75
Standby Current
Output Low Voltage Level
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
VOL
IOL=8mA
-
20
mA
-
5
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-4-
Rev. 3.0
July 2004
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