MASWSS0006
GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
Rev. V4
Electrical Specifications: TA = 25°C, VC = 0 V / 2.5 V, Z0 = 50 Ω 6
Parameter
Test Conditions
Units
Min.
Insertion Loss7
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 - 3.0 GHz
dB
—
dB
—
dB
—
Isolation
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 - 3.0 GHz
dB
23.0
dB
17.5
dB
—
Return Loss
DC – 2.0 GHz
2.0 - 3.0 GHz
dB
—
dB
—
IP3
Two Tone, +26 dBm / tone, 5 MHz Spacing
> 50 MHz
dBm
—
P0.1dB
2nd Harmonic
3rd Harmonic
Trise, Tfall
—
1.0 GHz, PIN = +34 dBm
1.0 GHz, PIN = +34 dBm
10% to 90% RF, 90% to 10% RF
dBm
—
dBc
—
dBc
—
uS
—
Ton, Toff
50% control to 90% RF, and 50% control to 10% RF
uS
—
Transients
In Band
mV
—
Typ.
0.40
0.50
0.75
26
20
16
20
16
57
39
-75
-75
0.04
0.06
50
Max.
0.65
0.75
—
—
—
—
—
—
—
-67
-67
—
—
—
Gate Leakage
uA
—
—
50
6. External DC blocking capacitors are required on all RF ports.
7. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 100 pF for 0.5 - 3.0 GHz.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
SOT-26 Plastic Package†
† Meets JEDEC moisture sensitivity level 1 requirements
2
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