MC33169 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

比赛名单

MC33169

GaAs Power Amplifier Support IC

ON Semiconductor 

MC33169

Figure 8. Output Voltage versus Load Current

–4.04

–4.035

–4.03

–4.025

25°C

–25°C

0°C

85°C

–4.02

–4.015

–4.01

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

LOAD CURRENT (mA)

Figure 9. VTx Control Voltage versus Gate

Drive Output Voltage

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

0

0.5

1.0

1.5

2.0

2.5

3.0

VTx, POWER CONTROL INPUT VOLTAGE (V)

OPERATING DESCRIPTION

The MC33169 is a power amplifier support IC that is

designed to properly switch “on” or “off” a MESFET Power

Amplifier either manually or by microprocessor. Controlling

the power drain of the RF Amplifier extends operating battery

life in many portable systems.

Outputs

The IC is designed to provide a –4.0 V bias to the gate of

the RF Ampllifier MESFET devices prior to application of a

positive battery voltage to the drain. The negative output

voltage can provide up to 5.0 mA of current. The positive

voltage control requires an external N–Channel logic level

MOSFET, connected as a source follower. The Gate Drive

Output, Pin 8, can source or sink 3.0 mA to the external

MOSFET. The low drive current slows the MOSFET

switching speed, thereby minimizing voltage glitches on the

VCC line which could cause disturbances to other circuitry.

Inputs

A Sense Input, Pin 10, protects the Power Amplifier load

by monitoring the level of the negative output voltage. If the

negative voltage magnitude falls below a preset level, 3.2 V

typical, an undervoltage lockout circuit disables the external

MOSFET gate drive.

The Tx Power Control Input controls the N–Channel

external switching MOSFET in source follower mode, which

allows linear control of the RF Output voltage level.

The Idle mode input is CMOS compatible, allowing the RF

Amplifier to be placed in a standby mode, drawing less than

1.0 µA from the power source.

6

MOTOROLA ANALOG IC DEVICE DATA

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