MC33169 查看數據表（PDF） - ON Semiconductor
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MC33169 Datasheet PDF : 10 Pages
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MC33169
Ci 0.22
Figure 10. Class 4 GSM with a Two–Stage Integrated Power Amplifier (I.P.A.)
C2 0.1
1
2
C1 0.1
VBatt
= 4.8 V Tx Power
(4 cells Control
3.0 V NlCd/NIMH) Input
0V
Idle
0V
3.0 V
MMSF4N01HD
100
5
G4
14
13
68
C3 1.0
6
S3
7 Drain S 2
8
1
3
100
12
C4 1.0
4 MC33169 11
MMBD701
LT1
5
10
Cp 1.0
6
9
7
8
– 4.0 V
.047
47 pF
3.3 k
VG2 tune
1.0 k
VG1 tune
50 Ω In
8.2 nH
6.8 pF
9 MRF IC 093 8
10
7
11
6
12
Out 5
13
Out 4
14
3
15 In
2
16
1
Grounded Backside
47 pF
2 mm
30 Ω
5.6 pF
.047
4 mm 47 pF
30 Ω
50 Ω Out
5.6 pF
Cf
0.22
RF
330
Figure 11. Transfer Characteristic for
Gate Drive Output
1.4
1.2
VBatt = 4.8 V
1.0
Pin = 10 dBm
VIdle = 3.0 V
0.8
0.6
TA = 25°C
Vramp: 40 Hz sinusoidal voltage
set for 95% AM depth on RF
0.4
0.2
VBatt = 4.8 V
VIdle = 3.0 V
Peak output
power: 34.6 dBm
0
0
0.5
1.0
1.5
2.0
2.5
VTx (V)
MOTOROLA ANALOG IC DEVICE DATA
7
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