MC33166 查看數據表（PDF） - ON Semiconductor
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MC33166 Datasheet PDF : 18 Pages
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MC34166, MC33166
Vin
12 V
+
Oscillator
PWM
Thermal
ILIMIT
S
Q
R
UVLO
Reference
+
EA
4
+ Cin
330
Q1
2
D1
1N5822
D4
1N4148
+
1
D3
1N967A
R2
6.8 k
L
190 mH
*RG
620
Q2
MTP3055EL
D2
1N5822
CO +
1000
VO
28 V/0.6 A
3
5
CF
RF
0.47
4.7 k
*Gate resistor RG, zener diode D3, and diode D4 are required only when Vin is greater than 20 V.
R1
1.5 k
Test
Conditions
Results
Line Regulation
Load Regulation
Output Ripple
Short Circuit Current
Efficiency
Vin = 8.0 V to 24 V, IO = 0.6 A
Vin = 12 V, IO = 0.1 A to 0.6 A
Vin = 12 V, IO = 0.6 A
Vin = 12 V, RL = 0.1 W
Vin = 12 V, IO = 0.6 A
23 mV = ± 0.41%
3.0 mV = ± 0.005%
100 mVpp
4.0 A
82.8%
L = Coilcraft M1496−A or General Magnetics Technology GMT−0223, 42 turns of #16 AWG
on Magnetics Inc. 58350−A2 core.
Heatsink = AAVID Engineering Inc. MC34166: 5903B, or 5930B MTP3055EL: 5925B
Figure 21 shows that the MC34166 can be configured as a step−up/down converter with the addition of an external power MOSFET. Energy
is stored in the inductor during the on−time of transistors Q1 and Q2. During the off−time, the energy is transferred, with respect to ground, to
the output filter capacitor and load. This circuit configuration has two significant advantages over the basic step−up converter circuit. The first
advantage is that output short−circuit protection is provided by the MC34166, since Q1 is directly in series with Vin and the load. Second, the
output voltage can be programmed to be less than Vin. Notice that during the off−time, the inductor forward biases diodes D1 and D2, transferring
its energy with respect to ground rather than with respect to Vin. When operating with Vin greater than 20 V, a gate protection network is required
for the MOSFET. The network consists of components RG, D3, and D4.
Figure 21. Step−Up/Down Converter
3.45″
VO
+ Vin −
+
ÎÎÎÎÎÎÎÎÎÎR−FÎÎÎÎÎR+ÎÎÎÎÎ1 CFÎÎÎÎÎ
+
D3
D2 ÎÎÎÎÎRG ÎÎÎ
(Bottom View)
(Top View)
Figure 22. Step−Up/Down Converter Printed Circuit Board and Component Layout
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