MD56V62160E 查看數據表（PDF） - Oki Electric Industry

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MD56V62160E

4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

OKI Semiconductor

MD56V62160E

4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM

FEDD56V62160E-01

Issue Date: Feb. 4, 2002

DESCRIPTION

The MD56V62160E is a 4-Bank × 1,048,576-word × 16-bit Synchronous dynamic RAM fabricated in

Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL

compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 4-Bank × 1,048,576-word × 16-bit configuration

• Single 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

- CAS Latency (1, 2, 3)

- Burst Length (1, 2, 4, 8, Full Page)

- Data scramble (sequential, interleave)

• CBR auto-refresh, Self-refresh capability

• Packages:

54-pin 400 mil plastic TSOP (TypeII) (TSOP(2)54-P-400-0.80-K)(Product: MD56V62160E-xxTA)

xx indicates speed rank.

PRODUCT FAMILY

Family

MD56V62160E-7

MD56V62160E-10

Max.

Frequency

143 MHz

100 MHz

Access Time (Max.)

tAC2

6 ns

tAC3

6 ns

6 ns

6 ns

1/34

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