MD56V62160E 查看數據表（PDF） - Oki Electric Industry

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MD56V62160E

4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

OKI Semiconductor

FEDD56V62160E-01

MD56V62160E

AC Characteristics (2/2)

Parameter

Symbol

Data Input Mask Time from Write

Command

lDWD

Data Output High Impedance Time

from Precharge Command

lROH

Active Command Input Time from

Mode Register Set Command Input lMRD

(Min.)

Write Command Input Time from

Output

lOWD

MD56V62160

E-7

E-10

Min.

Max.

Min.

Max.

0

0

CL

CL

2

2

2

2

Note1, 2

Unit Note

Cycle

Cycle

Cycle

Cycle

Notes: 1. AC measurements assume that tT = 1 ns.

2. The reference level for timing of input signals is 1.4 V.

The input signal conditions are below.

VIH = 2.4 V, VIL = 0.4 V

3. Output load.

Output

Z = 50Ω

50 pF (External Load)

4. The access time is defined at 1.4 V.

5. If tT is longer than 1 ns, then the reference level for timing of input signals is VIH and VIL.

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