NGD15N41CLT4 查看數據表（PDF） - ON Semiconductor
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NGD15N41CLT4 Datasheet PDF : 12 Pages
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NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
Forward Transconductance
VCE(on)
gfs
IC = 6.0 A,
VGE = 4.0 V
TJ = 25°C
TJ = 150°C
TJ = −40°C
1.0 1.6 1.8 VDC
0.9 1.5 1.8
1.1 1.65 1.9*
IC = 8.0 A,
VGE = 4.0 V
TJ = 25°C
1.3 1.8 2.0*
TJ = 150°C 1.2 1.7 1.9
TJ = −40°C 1.4 1.8 2.0*
IC = 10 A,
VGE = 4.0 V
TJ = 25°C
1.4 2.0 2.2
TJ = 150°C 1.5 2.0 2.3*
TJ = −40°C 1.4 2.0 2.2
IC = 10 A,
VGE = 4.5 V
TJ = 25°C
TJ = 150°C
TJ = −40°C
1.3 1.9 2.1
1.3 1.9 2.1
1.4 1.95 2.1*
VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 8.0 15 25 Mhos
150°C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
400 650 1000 pF
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
30
55 100
3.0 4.5 8.0
Turn−Off Delay Time (Inductive)
td(off)
VCC = 300 V, IC = 6.5 A
TJ = 25°C
− 4.0 10 µSec
RG = 1.0 kΩ, L = 300 µH TJ = 150°C
−
4.5 10
Fall Time (Inductive)
tf
VCC = 300 V, IC = 6.5 A
TJ = 25°C
− 6.0 12
RG = 1.0 kΩ, L = 300 µH TJ = 150°C
−
10 12
Turn−Off Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
TJ = 150°C
− 3.0 10 µSec
− 3.5 10
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
TJ = 25°C
− 8.0 15
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 150°C
−
12 15
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
TJ = 150°C
− 0.7 4.0 µSec
− 0.7 4.0
Rise Time
tr
VCC = 10 V, IC = 6.5 A
TJ = 25°C
− 4.0 7.0
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 150°C
−
5.0 7.0
3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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