NGD15N41CLT4 查看數據表（PDF） - ON Semiconductor
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NGD15N41CLT4 Datasheet PDF : 12 Pages
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NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
3
2.5
IC = 15 A
2
IC = 10 A
1.5
IC = 5 A
1
0.5
TJ = 150°C
10000
1000
100
10
1
Ciss
Coss
Crss
0
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
0
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 8. Capacitance Variation
2
1.8
Mean + 4 σ
Mean
1.6
1.4
1.2
Mean − 4 σ
1
0.8
0.6
0.4
0.2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
30
25
20
L = 2 mH
VCC = 50 V
VGE = 5 V
RG = 1000 Ω
15
L = 3 mH
10
L = 6 mH
5
0
−50 −25 0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
30
VCC = 50 V
25
VGE = 5 V
RG = 1000 Ω
20
L = 2 mH
L = 3 mH
15
10
L = 6 mH
5
0
−50 −25 0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
12
VCC = 300 V
10 VGE = 5 V
RG = 1000 Ω
8
IC = 10 A
L = 300 µH
6
4
tf
td(off)
2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time
versus Temperature
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5
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