B10NK60Z 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

B10NK60Z

N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical ratings

STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z

Table 3. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS (starting Tj=25°C, ID=IAR, VDD= 50V)

Repetitive avalanche energy

EAR (pulse width limited by Tj max)

Max value

Unit

9

A

300

mJ

3.5

mJ

4/19

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