B10NK60Z 查看數據表（PDF） - STMicroelectronics

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比赛名单

B10NK60Z

N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z

2

Electrical characteristics

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

VDS = Max rating,

VDS = Max rating, Tj=125°C

VGS = ±15V, VDS = 0

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 4.5 A

Min.

600

3

Typ.

3.75

0.65

Max. Unit

V

1 µA

50 µA

±10 µA

4.5 V

0.75 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Forward

transconductance

VDS =15V, ID = 4.5A

7.8

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

1370

156

37

pF

pF

pF

Coss

(2)

eq

Equivalent ouput

capacitance

VGS=0, VDS =0V to 480V

90

pF

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=480V, ID = 8A

VGS =10V (see Figure 19)

50

70 nC

10

nC

25

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80%

5/19

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