P4C147 查看數據表（PDF） - Semiconductor Corporation
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P4C147 Datasheet PDF : 10 Pages
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P4C147
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
– 0.5 to +7 V
– 0.5 to
VCC +0.5
V
– 55 to +125 °C
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
– 55 to +125 °C
– 65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING
CONDITIONS
Grade(2)
Commercial
Ambient Temp
0°C to 70°C
Gnd
VCC
0V 5.0V ± 10%
Military
-55°C to +125°C 0V 5.0V ± 10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Symbol
Parameter
Test Conditions
VOH Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
VOL Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min
VIH Input High Voltage
VIL Input Low Voltage
ILI Input Leakage Current
VCC = Max., VIN = GND to VCC
Mil.
Comm’l
ILO Output Leakage Current
VCC = Max., CE = VIH,
VOUT = GND to VCC
ISB
Standby Power Supply
Current (TTL Input Levels)
CE ≥ VIH, VCC = Max.,
f=Max., Output Open
Mil.
Comm’l
Mil.
Comm’l
ISB1 Standby Power Supply
Current
(CMOS Input Levels)
CE ≥ VHC, VCC = Max., f= 0,
Output Open
VIN ≤ 0.2V or VIN ≥ VCC -0.2V
Mil.
Comm’l
P4C147
Unit
Min.
Max.
2.4
V
2.2
–0.5(3)
–10
–5
–10
–5
__
__
__
__
0.4
V
VCC =+0.5 V
0.8
V
+10
+5
µA
+10
+5
µA
30
mA
23
15
mA
10
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
ICC
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10 -12 -15 -20 -25 -35 Unit
130 130 120 115 100 N/A mA
N/A N/A 145 135 125 120 mA
Document # SRAM103 REV A
Page 2 of 10
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