P4C147 查看數據表（PDF） - Semiconductor Corporation
零件编号
产品描述 (功能)
比赛名单
P4C147 Datasheet PDF : 10 Pages
| |||
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
tRC
tAA
tAC
tOH
tLZ
tHZ
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
-10
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max Min Max
10
12
15
20
25
35
10
12
15
20
25
35
10
12
15
20
25
35
2
2
2
2
2
2
2
2
2
2
2
2
4
5
6
8
10
14
tPU
Chip Enable to
Power Up Time
0
0
0
0
0
0
tPD
Chip Disable to
Power Down Time
10
12
15
20
25
35
P4C147
Unit
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
TIMING WAVEFORM OF READ CYCLE NO. 2
(6)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM103 REV A
Page 3 of 10
Share Link: 