PHP27NQ11T 查看數據表（PDF） - Philips Electronics
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PHP27NQ11T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHP27NQ11T
N-channel TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
03aa32
max
typ
10-1
ID
(A)
10-2
10-3
03aa35
min typ max
2
min
10-4
1
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
03ao66
Ciss
Coss
102
Crss
10
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 13183
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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